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Subject: ContentsDirect - Solar Energy Materials and Solar Cells, 5315, , Vol 49, Iss 1 - 1

              Contents Direct From Elsevier Science
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Journal : SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN : 0927-0248
Vol./Iss. : 49 / 1-4

pp.: 1-6
Effective conversion efficiency enhancement of amorphous
silicon modules by operation temperature elevation
Kondo , M.

pp.: 7-12
More insights from CPM and PDS: Charged and neutral defects
in a-Si:H
Siebke , Frank

pp.: 13-18
Changes of infrared absorption by light soaking and thermal
quenching in a-Si:H
Gotoh , Tamihiro

pp.: 19-26
Growth of Boron-doped ZnO thin films by atomic layer
deposition
Sang , Baosheng

pp.: 27-33
Controlled nucleation of thin microcrystalline layers for
the recombination junction in a-Si stacked cells
Vaucher , N. Pellaton

pp.: 35-44
Towards high-efficiency thin-film silicon solar cells with
the ``micromorph'' concept
Meier , J.

pp.: 45-51
Atomic scale characterization of a-Si:H/a-SiC:H interface
structures
Miyazaki , S.

pp.: 53-59
Preparation of (n) a-Si:H/(p) c-Si heterojunction solar cells
Borchert , D.

pp.: 61-67
Electrical properties of Cl incorporated hydrogenated
amorphous silicon
Ha Lee , Kyung

pp.: 69-74
Thermal equilibration and photocreation of neutral dangling
bonds in a-Si:H caused by floating bonds
Shimizu , Tatsuo

pp.: 75-80
Comparative study of defect states in light-soaked and
high-temperature-annealed a-Si:H
Kumeda , Minoru

pp.: 81-88
Deposition of microcrystalline silicon by electron beam
excited plasma
Sasaki , Toshiaki

pp.: 89-94
Characterization of high-quality a-SiC:H films prepared by
hydrogen-radical CVD method
Andoh , N.

pp.: 95-100
Preparation of very stable and low hydrogen content
amorphous silicon films by hydrogen-radical CVD method
Tsuyuki , T.

pp.: 101-106
Amorphous silicon solar cell on textured tempered glass
substrate prepared by sandblast process
Taniguchi , H.

pp.: 107-112
Development of tempered-glass substrates with TCO films for
a-Si solar cells
Fukawa , Makoto

pp.: 113-119
Fabrication of amorphous silicon p--i--n solar cells using
ion shower doping technique
Moon , Byeong Yeon

pp.: 121-125
Development of high-efficiency a-Si solar cell submodule
with a size of 30 cm*40 cm
Wakisaka , Kenichiro

pp.: 127-133
Low-cost amorphous silicon photovoltaic module encapsulated
with liquid resin
Kondo , M.

pp.: 135-142
Application of real-time spectroscopic ellipsometry for
characterizing the structure and optical properties of
microcrystalline component layers of amorphous semiconductor
solar cells
Koh , Joohyun

pp.: 143-148
Optical confinement in high-efficiency a-Si solar cells with
textured surfaces
Hishikawa , Yoshihiro

pp.: 149-156
Light-induced changes in hydrogen-diluted a-Si:H materials
and solar cells: A new perspective on self-consistent
analysis
Lee , Y.

pp.: 157-162
Spectral characteristics of a-Si:H/c-Si heterostructures
Gall , S.

pp.: 163-169
Optimal optical design of thin-film photovoltaic devices
Zhu , Furong

pp.: 171-177
Microcrystalline silicon films and tandem solar cells
prepared by triode PECVD
Liao , Xianbo

pp.: 179-186
Experimental model and long-term prediction of photovoltaic
conversion efficiency of a-Si solar cells
Takahisa , Kiyoshi

pp.: 187-193
Photo atomic layer deposition of transparent conductive ZnO
films
Saito , Koki

pp.: 195-203
Novel light-trapping schemes involving planar junctions and
diffuse rear reflectors for thin-film silicon-based solar
cells
Winz , K.

pp.: 205-212
15.1% Highly efficient thin film CdS/CdTe solar cell
Kumazawa , S.

pp.: 213-218
Interfacial mixed-crystal layer in CdS/CdTe heterostructure
elucidated by electroreflectance spectroscopy
Toyama , T.

pp.: 219-225
Improved junction formation procedure for low temperature
deposited CdS/CdTe solar cells
Takamoto , T.

pp.: 227-237
Prospects of wide-gap chalcopyrites for thin film
photovoltaic modules
Herberholz , R.

pp.: 239-247
Issues on the chalcopyrite/defect-chalcopyrite junction
model for high-efficiency Cu(In,Ga)Se2 solar cells
Contreras , Miguel A.

pp.: 249-260
Microstructural characterization of high-efficiency
Cu(In,Ga)Se2 solar cells
Wada , Takahiro

pp.: 261-267
Improved compositional flexibility of Cu(In,Ga)Se2-based
thin film solar cells by sodium control technique
Nakada , Tokio

pp.: 269-275
Improved performance of Cu(InGa)Se2 thin-film solar cells
using evaporated Cd-free buffer layers
Ohtake , Yasutoshi

pp.: 277-283
Fabrication of graded band-gap Cu(InGa)Se2 thin-film
mini-modules with a Zn(O,S,OH)x buffer layer
Kushiya , Katsumi

pp.: 285-290
Improved Cu(In,Ga)(S,Se)2 thin film solar cells by surface
sulfurization
Nakada , Tokio

pp.: 291-297
Large area ZnO films optimized for graded band-gap
Cu(InGa)Se2-based thin-film mini-modules
Cooray , Nawalage F.

pp.: 299-309
Determination of charge carrier collecting regions in
chalcopyrite heterojunction solar cells by
electron-beam-induced current measurements
Scheer , R.

pp.: 311-317
Examination of blocking current--voltage behaviour through
defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar
cell
Topic[caron] , M.

pp.: 319-326
Effects of annealing on CuInSe2 films grown by molecular
beam epitaxy
Niki , S.

pp.: 327-335
Growth of CuInS2 films by rf ion plating and their
characterization
Kondo , Ken-ichi

pp.: 337-342
Epitaxial n-Si/p-CuInS2 heterojunction devices
Metzner , H.

pp.: 343-348
CuInS2 thin-films solar cells fabricated by sulfurization of
oxide precursors
Negami , Takayuki

pp.: 349-356
Properties of CuInS2 thin films grown by a two-step process
without H2S
Klenk , R.

pp.: 357-363
The influence of sodium on the properties of CuInS2 thin
films and solar cells
Watanabe , Takayuki

pp.: 365-374
Photovoltaic characteristics of CuInS2/CdS solar cell by
electron beam evaporation
Park , Gye-Choon

pp.: 375-381
Over 10% efficient CuInS2 solar cell by sulfurization
Nakabayashi , T.

pp.: 383-390
Effects of post-deposition treatment on the PL spectra and
the hydrogen content of CuInS2 absorber layers
To"pper , K.

pp.: 391-397
Control of valence states by a codoping method in CuInS2
Yamamoto , Tetsuya

pp.: 399-405
Characterization of CuInS2 thin films prepared by sputtering
from binary compounds
Yamamoto , Y.

pp.: 407-414
Preparation and evaluation of Cu2ZnSnS4 thin films by
sulfurization of E--B evaporated precursors
Katagiri , Hironori

pp.: 415-421
Preparation of CuInS2 films with sufficient sulfur content
and excellent morphology by one-step electrodeposition
Nakamura , Sigeyuki

pp.: 423-430
Electrical properties of coevaporated CuInS2 thin films
Scheer , R.


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