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Date: Fri, 27 Oct 2000 09:36:30 +0100 (BST)
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Subject: ContentsDirect - Solar Energy Materials & Solar Cells, 05315,
Vol 66 Iss 1 - 4
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Journal: Solar Energy Materials and Solar Cells
ISSN : 0927-0248
Volume : 66
Issue : 1-4
Date : Feb-2001
Visit the journal at http://www.elsevier.nl/locate/jnlnr/05315.htm00.letters.html.1/lc_51tv-2000l
pp 1-9
Characterization of crystalline silicon grown by plasma-enhanced CVD
for thin-film solar cells
K.-i. Kurobe, T. Fuyuki, H. Matsunami
pp 11-15
Impact and options for boron diffusions in buried contact solar cells
A.M. Slade, C.B. Honsberg, S.R. Wenham
pp 17-25
The use of silicon nitride in buried contact solar cells
B. Vogl, A.M. Slade, S.C. Pritchard, M. Gross, C.B. Honsberg, J.E.
Cotter, S.R. Wenham
pp 27-36
24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and
cell performance on other SEH CZ and FZ substrates
J. Zhao, A. Wang, M.A. Green
pp 37-44
Experiments on anisotropic etching of Si in TMAH
J.S. You, D. Kim, J.Y. Huh, H.J. Park, J.J. Pak, C.S. Kang
pp 45-50
High current, thin silicon-on-ceramic solar cell
A.M. Barnett, J.A. Rand, R.B. Hall, J.C. Bisaillon, E.J. DelleDonne,
B.W. Feyock, D.H. Ford, A.E. Ingram, M.G. Mauk, J.P. Yaskoff, P.E.
Sims
pp 51-59
Effect of light degradation on bifacial Si solar cells
H. Ohtsuka, M. Sakamoto, M. Koyama, S. Muramatsu, Y. Yazawa, T.
Warabisako, T. Abe, T. Saitoh
pp 61-71
Charge transport in microcrystalline Si - the specific features
J. Kocka, A. Fejfar, P. Fojtk, K. Luterova, I. Pelant, B. Rezek, H.
Stuchlkova, J. Stuchlk, V. Svrcek
pp 73-84
Microcrystalline/micromorph silicon thin-film solar cells prepared by
VHF-GD technique
J. Meier, E. Vallat-Sauvain, S. Dubail, U. Kroll, J. Dubail, S.
Golay, L. Feitknecht, P. Torres, S. Fay, D. Fischer, A. Shah
pp 85-94
Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells
S. Okamoto, E. Maruyama, A. Terakawa, W. Shinohara, S. Nakano, Y.
Hishikawa, K. Wakisaka, S. Kiyama
pp 95-105
Mass-production of large size a-Si modules and future plan
Y. Tawada, H. Yamagishi
pp 107-115
Production technology for amorphous silicon-based flexible solar
cells
Y. Ichikawa, T. Yoshida, T. Hama, H. Sakai, K. Harashima
pp 117-125
Cost effective and high-performance thin film Si solar cell towards
the 21st century
K. Yamamoto, M. Yoshimi, Y. Tawada, Y. Okamoto, A. Nakajima
pp 127-136
Formation of stable Si network at low T"s by controlling chemical
reaction at growing surface
I. Shimizu
pp 137-145
Spatial distribution of high-density microwave plasma for fast
deposition of microcrystalline silicon film
H. Shirai, Y. Sakuma, K. Yoshino, H. Ueyama
pp 147-153
Modeling charge-carrier transport and generation-recombination
mechanisms in p^+n^+ a-Si tunnel junctions
J. Furlan, Z. Gorup, F. Smole, M. Topic
pp 155-162
Wide optical band gap window layers for solar cells
Z. Yu, I. Pereyra, M.N.P. Carreno
pp 163-170
Performance of p-type silicon-oxide windows in amorphous silicon
solar cell
Y. Matsumoto, F. Melendez, R. Asomoza
pp 171-177
Kelvin probe measurements of microcrystalline silicon on a nanometer
scale using SFM
A. Breymesser, V. Schlosser, D. Peiro, C. Voz, J. Bertomeu, J.
Andreu, J. Summhammer
pp 179-185
Effect of halogen additives on the stability of a-Si:H films
deposited at a high-growth rate
T. Nishimoto, T. Takagi, M. Kondo, A. Matsuda
pp 187-193
Characterisation of light trapping in silicon films by spectral
photoconductance measurements
P. Campbell, M. Keevers, B. Vogl
pp 195-201
The influence of doping on charge carrier transport in a-Si:H
D. Herm, S. von Aichberger, M. Kunst
pp 203-207
A large discrepancy between CPM and ESR defect densities in
light-soaked a-Si:H
T. Shimizu, H. Sugiyama, M. Kumeda
pp 209-215
Application of real-time in situ spectroscopic ellipsometry and
infrared spectroscopy for characterizing interface structure of
a-Si:H layer
H. Fujiwara, Y. Toyoshima, M. Kondo, A. Matsuda
pp 217-223
High rate growth of microcrystalline silicon using a high-pressure
depletion method with VHF plasma
M. Fukawa, S. Suzuki, L. Guo, M. Kondo, A. Matsuda
pp 225-230
High-rate deposition of polycrystalline silicon thin films by hot
wire cell method using disilane
M. Ichikawa, T. Tsushima, A. Yamada, M. Konagai
pp 231-237
A new perspective on the characterization of materials for a-Si:H
solar cells
L. Jiao, X. Niu, Z. Lu, C.R. Wronski, A. Matsuda, T. Kamei, G.
Ganguly
pp 239-244
Role of hydrogen in hydrogenated microcrystalline silicon
T. Itoh, K. Yamamoto, H. Harada, N. Yamana, N. Yoshida, H. Inouchi,
S. Nonomura, S. Nitta
pp 245-251
Absorption coefficient spectra of @mc-Si in the low-energy region
0.4-1.2eV
J. Kitao, H. Harada, N. Yoshida, Y. Kasuya, M. Nishio, T. Sakamoto,
T. Itoh, S. Nonomura, S. Nitta
pp 253-258
The creation of hydrogen radicals by the hot-wire technique and its
application for @mc-Si:H
H. Harada, N. Yoshida, K. Yamamoto, T. Itoh, K. Inagaki, H. Inouchi,
N. Yamana, T. Aoki, S. Nonomura, S. Nitta
pp 259-265
Dominant parameter determining dangling-bond density in hydrogenated
amorphous silicon films prepared by catalytic chemical vapor
deposition
A. Masuda, C. Niikura^1, Y. Ishibashi, H. Matsumura
pp 267-273
Amorphous and microcrystalline silicon solar cells prepared at high
deposition rates using RF (13.56MHz) plasma excitation frequencies
B. Rech, T. Roschek, J. Muller, S. Wieder, H. Wagner
pp 275-281
Development of highly efficient thin film silicon solar cells on
texture-etched zinc oxide-coated glass substrates
J. Muller, O. Kluth, S. Wieder, H. Siekmann, G. Schope, W. Reetz, O.
Vetterl, D. Lundszien, A. Lambertz, F. Finger, B. Rech, H. Wagner
pp 283-288
High growth-rate fabrication of micro-crystalline silicon by Helicon
wave plasma CVD
K. Endo, M. Isomura, M. Taguchi, H. Tarui, S. Kiyama
pp 289-295
Properties of amorphous silicon solar cells fabricated from SiH"2Cl"2
S. Shimizu, T. Komaru, K. Okawa, M. Azuma, T. Kamiya, C.M. Fortmann,
I. Shimizu
pp 297-303
Stability of a-Si:H solar cells deposited by Ar-treatment or by ECR
techniques
K. Ohkawa, S. Shimizu, H. Sato, T. Komaru, W. Futako, T. Kamiya, C.M.
Fortmann, I. Shimizu
pp 305-311
Microstructure control of very thin polycrystalline silicon layers on
glass substrate by plasma enhanced CVD
D. Matsuura, T. Kamiya, C.M. Fortmann, I. Simizu
pp 313-320
In situ hydrogen plasma treatment for improved transport of (400)
oriented polycrystalline silicon films
A. Suemasu, K. Nakahata, K. Ro, T. Kamiya, C.M. Fortmann, I. Shimizu
pp 321-327
High-quality narrow gap (~1.52eV) a-Si:H with improved stability
fabricated by excited inert gas treatment
H. Sato, K. Fukutani, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu
pp 329-335
Improved p-i-n solar cells structure for narrow bandgap a-Si:H
prepared by Ar^* chemical annealing at high temperatures
T. Komaru, H. Sato, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu
pp 337-343
High-rate deposition of hydrogenated amorphous silicon films using
inductively coupled silane plasma
N. Sakikawa, Y. Shishida, S. Miyazaki, M. Hirose
pp 345-351
Thickness dependence of microcrystalline silicon solar cell
properties
O. Vetterl, A. Lambertz, A. Dasgupta, F. Finger, B. Rech, O. Kluth,
H. Wagner
pp 353-359
Effect of front and back contact roughness on optical properties of
single junction a-Si:H solar cells
M. Zeman, R.A.C.M.M. Van Swaaij, M. Zuiddam, J.W. Metselaar, R.E.I.
Schropp
pp 361-367
Numerical modelling of trap-assisted tunnelling mechanism in a-Si:H
and @mc-Si n/p structures and tandem solar cells
M. Vukadinovic, F. Smole, M. Topic, J. Krc, J. Furlan
pp 369-374
Floating zone growth of @b-Ga"2O"3: a new window material for
optoelectronic device applications
Y. Tomm, J.M. Ko, A. Yoshikawa, T. Fukuda
pp 375-380
High-pressure plasma CVD for high-quality amorphous silicon
M. Isomura^1, M. Kondo, A. Matsuda
pp 381-387
Characterization of pulsed laser crystallization of silicon thin film
S. Ishigame, K. Ozaki, T. Sameshima, S. Higashi
pp 389-395
Analysis of free-carrier optical absorption used for characterization
of microcrystalline silicon films
T. Sameshima, K. Saitoh, N. Aoyama, M. Tanda, M. Kondo, A. Matsuda,
S. Higashi
pp 397-403
Microcrystalline n-i-p solar cells deposited at 10@?9/s by VHF-GD
L. Feitknecht, O. Kluth, Y. Ziegler, X. Niquille, P. Torres, J.
Meier, N. Wyrsch, A. Shah
pp 405-412
Microcrystalline Si films deposited from dichlorosilane using
RF-PECVD
L. Guo^1, M. Kondo, A. Matsuda
pp 413-419
More stable low gap a-Si:H layers deposited by PE-CVD at moderately
high temperature with hydrogen dilution
Y. Ziegler, V. Daudrix, C. Droz, R. Platz, N. Wyrsch, A. Shah
pp 421-429
Microcrystalline silicon films deposited by hot-wire CVD for solar
cells on low-temperature substrate
C. Niikura, R. Brenot, J. Guillet, J.E. Bouree, J.P. Kleider, R.
Bruggemann, C. Longeaud
pp 431-435
Epitaxial growth of polycrystalline films formed by microwave plasma
chemical vapor deposition at low temperatures
N. Andoh, K. Kamisako, T. Sameshima, T. Saitoh
pp 437-441
Effect of film thickness on electrical property of microcrystalline
silicon
N. Andoh, K. Hayashi, T. Shirasawa, T. Sameshima, K. Kamisako
pp 443-452
An overview of thermophotovoltaic generation of electricity
T.J. Coutts
pp 453-466
Recent developments in high-efficiency Ga"0"."5In"0"."5P/GaAs/Ge
dual- and triple-junction solar cells: steps to next-generation PV
cells
N.H. Karam, R.R. King, M. Haddad, J.H. Ermer, H. Yoon, H.L. Cotal, R.
Sudharsanan, J.W. Eldredge, K. Edmondson, D.E. Joslin, D.D. Krut, M.
Takahashi, W. Nishikawa, M. Gillanders, J. Granata, P. Hebert, B.T.
Cavicchi, D.R. Lillington
pp 467-477
Radiation-induced defects in solar cell materials
J.C. Bourgoin, N. de Angelis
pp 479-486
Heteroepitaxial technologies of III-V on Si
H. Kawanami
pp 487-494
ESA's space solar array technology programme current status and
future activities
E. Fernandez Lisbona, C. Signorini, K. Peter Bogus
pp 495-500
Solar cell degradation by electron irradiation. Comparison between
Si, GaAs and GaInP cells
N. de Angelis, J.C. Bourgoin, T. Takamoto, A. Khan, M. Yamaguchi
pp 501-509
Temperature-dependent study of the radiative losses in double-quantum
well solar cells
B. Kluftinger, K. Barnham, J. Nelson, T. Foxon, T. Cheng
pp 511-516
High-efficiency InGaP/In"0"."0"1Ga"0"."9"9As tandem solar cells
lattice-matched to Ge substrates
T. Takamoto, T. Agui, E. Ikeda, H. Kurita
pp 517-524
Characteristics of Al"0"."3"6Ga"0"."6"4As/GaAs tandem solar cells
with pp^-n^-n structural AlGaAs solar cells
K. Takahashi, S. Yamada, Y. Minagawa, T. Unno
pp 525-532
Improved efficiency of Al"0"."3"6Ga"0"."6"4As solar cells with a
pp^-n^-n structure
K. Takahashi, Y. Minagawa, S. Yamada, T. Unno
pp 533-540
Fabrication and simulation of GaSb thermophotovoltaic cells
O.V. Sulima, A.W. Bett
pp 541-550
Advanced III-V solar cell structures grown by MOVPE
A.W. Bett, R. Adelhelm, C. Agert, R. Beckert, F. Dimroth, U. Schubert
pp 551-558
Development of both-side junction silicon space solar cells
Y. Tonomura, M. Hagino, H. Washio, M. Kaneiwa, T. Saga, O. Anzawa, K.
Aoyama, K. Shinozaki, S. Matsuda
pp 559-565
Characteristics of GaAs-based concentrator cells
K. Araki, M. Yamaguchi, T. Takamoto, E. Ikeda, T. Agui, H. Kurita, K.
Takahashi, T. Unno
pp 567-571
Shadow protection for tandem solar cells in space
S.J. Taylor, C.M. Hardingham, C.R. Huggins, A. Kelt, S. Wood, J.
Simpson, J. Burrage, A. Hayward, R. Ginige, T. Cross, C. Clark, V.
Van der Zel
pp 573-578
Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells
flown onboard Equator-S satellite
J. Haapamaa, M. Pessa, G. La Roche
pp 579-583
Analysis of energy balance of electricity and heat generated by TPV
generators
T. Amano, M. Yamaguchi
pp 585-592
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD
using TBAs and TBP as V-precursors
A. Moto, S. Tanaka, T. Tanabe, S. Takagishi
pp 593-598
Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency
solar cell application
K. Akahori, G. Wang, K. Okumura, T. Soga, T. Jimbo, M. Umeno
pp 599-605
A detailed study of H"2 plasma passivation effects on GaAs/Si solar
cell
G. Wang, T. Ogawa, T. Soga, T. Jimbo, M. Umeno
pp 607-614
High-quality thin film GaAs bonded to Si using SeS"2 - A new approach
for high-efficiency tandem solar cells
J. Arokiaraj, H. Okui, H. Taguchi, T. Soga, T. Jimbo, M. Umeno
pp 615-620
Progress toward high-efficiency (>24%) and low-cost multi-junction
solar cell production
P.K. Chiang, C.L. Chu, Y.C.M. Yeh, P. Iles, F. Ho
pp 621-630
High-lifetime GaAs on Si using GeSi buffers and its potential for
space photovoltaics
J.A. Carlin, S.A. Ringel, A. Fitzgerald, M. Bulsara
pp 631-636
Improvement in photovoltaic conversion efficiency of InGaP solar
cells grown on Si substrate by thermal cleaning using Si"2H"6
S. Goto, T. Ueda, C. Yamagishi
pp 637-644
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs
at low-temperatures and low V/III-ratios
C. Agert, F. Dimroth, U. Schubert, A.W. Bett, S. Leu, W. Stolz
pp 645-653
Development and manufacturing of CIS thin film solar modules
F.H. Karg
pp 655-665
Index
pp 667-670
Index
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